The TMC429 offers high level control functions for robust and reliable operation. Based on target positions and velocities - which can be altered on the fly - it performs all real time critical tasks autonomously. The SPI interface provides a programmable 6 bit microstep table (64 µsteps / fullstep) for best step accuracy with 2-phase stepper motors. It controls up to three motors via SPI or Step/Direction interface. The TMC429 is a miniaturized stepper motor controller with an industry leading feature set. It is designed to give users the chance to rapidly prototype their applications - making it possible to immediately check how the motor performs with TMC chips while developing the application's software. The TMC429 breakout board is a development board with the dedicated TMC429 chip. Interlocking function to prevent cross conduction Wide input supply voltage down to 6.5 VUVLO protection on supply voltageģ.3 V to 15 V compatible inputs with hysteresis and pull-down Suitable for operating as: Full-bridge or Dual independent half-bridges
#Hard driver controller board on motherboard vad drivers#
Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 m?, BVDSS = 600V Both controlling and power signals are available on pin strip for easy connection to customer's board.
The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 ☌/W, capable to drive loads up to 2 ARMS, without forced airflow cooling. The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage. The high integration of the device allows loads in a tiny space to be driven efficiently. The integrated power MOSFETs have a low RDS(on) of 320 m? and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.
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